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| PD- 95612 IRG4BC15MDPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features * Rugged: 10sec short circuit capable at VGS = 15V * Low VCE(on) for 4 to 10kHz applications * IGBT co-packaged with ultra-soft-recovery anti-parallel diodes C Short Circuit Rated Fast IGBT VCES = 600V Benefits * Industry standard TO-220AB package * Lead-Free G E VCE(on) typ. = 1.88V @VGE = 15V, IC = 8.6A * Best Value for Appliance and Industrial applications * Offers highest efficiency and short circuit capability for intermediate applications * Provides best efficiency for the mid range frequency (4 to 10kHz) * Optimized for Appliance and Industrial applications up to 1HP * High noise immune "Positive Only" gate drive - Negative bias gate drive not necessary * For Low EMI designs - requires little or no snubbing * Single Package switch for bridge circuit applications * Compatible with high voltage Gate Drive IC's * Allows simpler gate drive n-channel TO-220AB Absolute Maximum Ratings VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C tsc IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Short Circuit Withstand Time Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 600 14 8.6 28 28 4.0 12 16 20 49 19 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m) Units V A s A V W C Thermal Resistance RJC RJC RCS RJA Wt Parameter Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. --- --- --- --- --- Typ. --- --- 0.50 --- 2 (0.07) Max. 2.7 7.0 --- 80 --- Units C/W g (oz) www.irf.com 1 8/2/04 IRG4BC15MDPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES Parameter Collector-to-Emitter Breakdown Voltage V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage VCE(on) Collector-to-Emitter Saturation Voltage Min. 600 --- --- --- --- Gate Threshold Voltage 4.0 Temperature Coeff. of Threshold Voltage --- Forward Transconductance 2.3 Zero Gate Voltage Collector Current --- --- Diode Forward Voltage Drop --- --- Gate-to-Emitter Leakage Current --- Typ. --- 0.65 1.88 2.6 2.1 --- -10 3.4 --- --- 1.5 1.4 --- Max. Units Conditions --- V VGE = 0V, IC = 250A --- V/C VGE = 0V, IC = 1.0mA 2.3 IC = 8.6A VGE = 15V --- V IC = 14A --- IC = 8.6A, TJ = 150C 6.5 VCE = VGE, IC = 250A --- mV/C VCE = VGE, IC = 250A --- S VCE = 100V, IC = 6.5A 250 A VGE = 0V, VCE = 600V 1400 VGE = 0V, VCE = 600V, TJ = 150C 1.8 V IC = 4.0A 1.7 IC = 4.0A, TJ = 150C 100 nA VGE = 20V VGE(th) VGE(th)/TJ gfe ICES VFM IGES Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. 46 4.2 15 21 38 540 350 0.32 1.93 2.25 20 42 650 590 3.0 7.5 340 35 8.8 28 38 2.9 3.7 40 70 280 240 Max. Units Conditions --- IC = 8.6A --- nC VCC = 400V --- VGE = 15V --- TJ = 25C --- ns IC = 8.6A, VCC = 480V 810 VGE = 15V, RG = 75 530 Energy losses include "tail" and --- diode reverse recovery. --- mJ 3.6 --- TJ = 150C, --- ns IC = 8.6A, VCC = 480V --- VGE = 15V, RG = 75 --- Energy losses include "tail" and --- mJ diode reverse recovery. --- nH Measured 5mm from package --- VGE = 0V --- pF VCC = 30V --- = 1.0MHz 42 ns TJ = 25C 57 TJ = 125C IF = 4.0A 5.2 A TJ = 25C 6.7 TJ = 125C VR = 200V 60 nC TJ = 25C 110 TJ = 125C di/dt 200A/s --- A/s TJ = 25C --- TJ = 125C IRG4BC15MDPBF 10 8 Load Current ( A ) 6 60% of rated voltage Duty cycle : 50% Tj = 125C Tsink = 90C Gate drive as specified Turn-on losses include effects of reverse recovery Power Dissipation = 11W 4 2 Ideal diodes 0 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 I C , Collector-to-Emitter Current (A) I C, Collector-to-Emitter Current (A) 10 10 TJ = 150 C TJ = 150 C 1 1 TJ = 25 C V GE = 15V 20s PULSE WIDTH 1 10 TJ = 25 C V CC = 50V 5s PULSE WIDTH 10.0 15.0 20.0 0.1 0.1 0.1 5.0 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics IRG4BC15MDPBF 15 4.0 VGE = 15V 80s PULSE WIDTH Maximum DC Collector Current(A) 12 VCE , Collector-to Emitter Voltage (V) IC = 17A 3.0 9 IC = 9.0A 2.0 6 3 IC = 4.3A 0 1.0 25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 TC , Case Temperature ( C) T J , Junction Temperature (C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case IRG4BC15MDPBF 500 400 VGE , Gate-to-Emitter Voltage (V) 100 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 9.0A 16 C, Capacitance (pF) Cies 300 12 200 8 100 Coes Cres 1 10 4 0 0 0 10 20 30 40 50 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 2.30 VCC = 480V VGE = 15V TJ = 25C I C = 8.6A 2.20 100 RG = 75 VGE = 15V VCC = 480V 10 IC = 17A Total Switching Losses (mJ) Total Switching Losses (mJ) IC = 9.0A IC = 4.3A 1 2.10 2.00 0 10 20 30 40 50 60 70 80 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG, Gate Resistance () T J, Junction Temperature (C) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature IRG4BC15MDPBF 10.0 100 Total Switching Losses (mJ) 8.0 VCC = 480V 6.0 IC , Collector-to-Emitter Current (A) RG = 75 TJ = 150C VGE = 15V VGE = 20V T J = 125 SAFE OPERATING AREA 10 4.0 2.0 1 0.0 2 4 6 8 10 12 14 16 18 1 10 100 1000 IC, Collector Current (A) VDS, Drain-to-Source Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA 10 TJ = 150C T = 125C J J T = 25C 1 0.1 0.0 1.0 2.0 3.0 4.0 5.0 6.0 (V) Forward Voltage Drop -- V FM ( V ) Voltage Drop V FM IRG4BC15MDPBF 50 14 VR = 200V TJ = 125C TJ = 25C 45 I F = 8.0A I F = 4.0A 12 10 40 I F = 8.0A I F = 4.0A trr- (nC) 35 Irr- ( A) 8 6 30 4 25 VR = 200V TJ = 125C TJ = 25C 20 100 2 di f /dt - (A/s) 1000 0 100 di f /dt - (A/s) 1000 Fig. 14 - Typical Reverse Recovery vs. dif/dt 200 VR = 200V TJ = 125C TJ = 25C 160 Fig. 15 - Typical Recovery Current vs. dif/dt 1000 VR = 200V TJ = 125C TJ = 25C I F = 8.0A I F = 8.0A di (rec) M/dt- (A /s) 120 I F = 4.0A I F = 4.0A Qrr- (nC) 80 40 0 100 di f /dt - (A/s) 1000 100 100 A di f /dt - (A/s) 1000 Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt, IRG4BC15MDPBF Same type device as D.U.T. 90% Vge +Vge Vce 80% of Vce 430F D.U.T. Ic 10% Vce 90% Ic Ic 5% Ic td(off) tf Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Eoff = t1+5S Vce Ic Vce ic dtdt t1 t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T. 10% +Vg +Vg Ic trr Qrr = trr id dt Ic dt tx tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk 10% Irr Vcc Vpk Irr Ic DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Vce Ic Eon = Vce ie dt dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3 t4 Erec = Vd idIc dt Vd dt t3 t1 t4 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr IRG4BC15MDPBF Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 6000F 100V Vc* D.U.T. RL= 0 - 480V 480V 4 X IC @25C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit IRG4BC15MDPBF Notes: Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature VCC=80%(VCES), VGE=20V, L=10H, RG = 75 Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. TO-220AB Package Outline 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 2 1- GATE- DRAIN 1- GATE 32- DRAINSOURCE 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN LEAD ASSIGNMENTS HEXFET 14.09 (.555) 13.47 (.530) 4- DRAIN 4.06 (.160) 3.55 (.140) 4- COLLECTOR 3X 3X 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 2.92 (.115) 2.64 (.104) 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAMPL E : T HIS IS AN IR F 1010 L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T HE AS S E MB LY L INE "C" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE PAR T NU MB ER Note: "P" in assembly line position indicates "Lead-Free" DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/04 |
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